2SD817

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD817 DESCRIPTION ・With TO-3 package ・High voltage ,high reliability ・Wide area of safe operation APPLICATIONS ・High voltage power switching TV horizontal deflection output applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION ・ Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 1500 600 6 1.5 50 150 -55~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD817 MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 6 V V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 600 V VCEsat Collector-emitter saturation voltage IC=1.2A; IB=0.3A 5.0 V VBEsat Base-emitter saturation voltage IC=1.2A; IB=0.3A 1.5 V ICBO Collector cut-off current VCB=800V;IE=0 10 μA IEBO Emitter cut-off current VEB=6V; IC=0 10 μA hFE DC current gain IC=0.3A ; VCE=5V 10 30 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD817 Fig.2 Outline dimensions 3