2SD819

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD819 DESCRIPTION ·High Collector-Base Breakdown Voltage: V(BR)CBO= 1500V (Min.) ·Low Collector Saturation Voltage·High Switching Speed APPLICATIONS ·Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3.5 A IE Emitter Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature -3.5 A PC 50 W Tj 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD819 MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.8A B 8.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.8A B 1.5 V ICBO Collector Cutoff Current VCB= 500V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA hFE DC Current Gain IC= 0.5A; VCE= 5V 8 COB Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz 95 pF fT Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V 3 MHz tf Fall Time ICP= 3A; IB1(end)= 0.8A 1.0 μs isc Website：www.iscsemi.cn