2SD820

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD820 DESCRIPTION ・With TO-3 package ・High voltage ,high speed ・Low collector saturation voltage APPLICATIONS ・For color TV horizontal output applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION ・ Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC IE PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 1500 600 5 5 -5 50 150 -65~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD820 MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0 600 V VCEsat Collector-emitter saturation voltage IC=4 A;IB=0.8 A 3.0 5.0 V VBEsat Base-emitter saturation voltage IC=4 A;IB=0.8 A 1.5 V ICBO Collector cut-off current VCB=500V;IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 1 mA hFE DC current gain IC=1A ; VCE=5V 8 20 COB Output capacitance IE=0; VCB=10V;f=1MHz 165 pF fT Transition frequency IC=0.1A ; VCE=10V 3 MHz tf Fall time ICP=4A ;IB1=0.8A 0.5 1.0 μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD820 Fig.2 Outline dimensions 3