2SD834

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・High DC current gain ・DARLINGTON ・Low collector saturation voltage ・Excellent safe operating area APPLICATIONS ・Electronic ignitor ・Relay and solenoid drivers ・Switching regulators ・Motor controls PINNING PIN 1 2 3 Base Collector;connected to mounting base DESCRIPTION 2SD834 Fig.1 simplified outline (TO-220) and symbol Emitter Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VCEO(SUS) VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Open base Collector-emitter voltage Emitter-base voltage Collector current-continuous Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector 180 10 4 0.3 25 150 -55~150 V A A W ℃ ℃ Open emitter CONDITIONS VALUE 250 200 V UNIT V THERMAL CHARACTERISTICS SYMBOL Rθjc CHARACTERISTICS Thermal resistance junction to case MAX 5.0 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE PARAMETER Collector-emitter sustaining voltage Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=1A ; IB=0 IC=10mA ; IB=0 IC=0.1mA ; IE=0 IE=10mA ; IC=0 IC=2A;IB=2mA IC=2A;IB=2mA VCB=250V; IE=0 VEB=10V; IC=0 IC=2A ; VCE=2V 1500 MIN 180 200 250 10 TYP. 2SD834 MAX UNIT V V V V 1.5 2.0 0.1 10 V V mA mA Switching times ton ts tf Turn-on time Storage time Fall time IC=2A;IB1=-IB2=5mA; RL=10Ω PW=20μs;Duty≤2% 1.7 15.0 18.0 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD834 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3