2SD843

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD843 DESCRIPTION ·High Collector Current:: IC= 7A ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@IC= 4A ·High Collector Power Dissipation ·Complement to Type 2SB753 APPLICATIONS ·High current switching applications ·Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous Collector Power Dissipation @ Ta=25℃ 7 A 1.5 W PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 40 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CEO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain—Bandwidth Product Output Capacitance CONDITIONS IC= 50mA ; IB= 0 IC= 4A; IB= 0.4A B 2SD843 MIN 80 TYP. MAX UNIT V 0.5 1.4 5 5 70 30 10 250 240 V V μA μA IC= 4A; IB= 0.4A B VCB= 100V ; IE= 0 VEB= 5V; IC= 0 IC= 1A; VCE= 1V IC= 4A; VCE= 1V IC= 1A ; VCE= 4V IE= 0; VCB= 10V; ftest= 1MHz MHz pF Switching times ton tstg tf Turn-on Time Storage Time Fall Time RL= 10Ω, VCC= 30V IB1= -IB2= 0.3A 0.4 2.5 0.5 μs μs μs hFE-1 Classifications O 70-140 Y 120-240 isc Website：www.iscsemi.cn 2