2SD845

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD845 DESCRIPTION ・With MT-200 package ・Complement to type 2SB755 ・High transition frequency ・High breakdown voltage :VCEO=150V(min) APPLICATIONS ・For power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION ・ Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 150 150 5 12 1.2 120 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCEsat VBE ICBO IEBO hFE fT PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=0.1A; IB=0 IE=10mA; IC=0 IC=5 A;IB=0.5 A IC=5A ; VCE=5V VCB=150V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=1A ; VCE=10V 55 20 MIN 150 5 TYP. 2SD845 MAX UNIT V V 2.0 1.5 -50 -50 160 V V μA μA MHz hFE classifications R 55-110 O 80-160 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD845 Fig.2 Outline dimensions 3