2SD849

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD849 DESCRIPTION ・With TO-3 package ・High voltage ,high speed APPLICATIONS ・Line-operated horizontal deflection output applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION ・ Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC ICM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Total power dissipation Junction temperature Storage temperature TC=90℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 600 5 3 5 25 150 -65~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown votage Collector-emitter saturation voltage Base-emitter saturation voltage CONDITIONS IC=0.1A; IB=0 IE=10mA; IC=0 IC=3 A;IB=1A IC=3 A;IB=1A VCB=750V;IE=0 ICBO Collector cut-off current VCB=1500V;IE=0 hFE-1 hFE-2 tf ts DC current gain DC current gain Fall time IC=3 A;IBend=1A;LB=20μH Storage time 13 IC=0.5A ; VCE=5V IC=3A ; VCE=10V 8 4 MIN 600 5 TYP. 2SD849 MAX UNIT V V 5.0 1.5 0.1 V V mA 1.0 12 0.9 μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD849 Fig.2 Outline dimensions 3