2SD850

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD850 DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·Line-operated horizontal deflection output applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION · Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC ICM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Total power dissipation Junction temperature Storage temperature TC=90℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 700 5 3 5 25 150 -65~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD850 MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0 600 V V(BR)EBO Emitter-base breakdown votage IE=10mA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=2.5 A;IB=0.8A 4.0 V VBEsat Base-emitter saturation voltage IC=2.5 A;IB=0.8A 1.5 V μA VCB=750V;IE=0 ICBO Collector cut-off current VCB=1500V;IE=0 50 1.0 mA hFE-1 DC current gain IC=0.5A ; VCE=5V 8 hFE-2 DC current gain IC=2.5A ; VCE=10V 4 15 μs μs tf Fall time IC=2.5A;IBend=0.8A;LB=5μH 1.0 ts Storage time 13 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD850 Fig.2 Outline dimensions 3