2SD856

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD856 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 60V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB761 APPLICATIONS ·Designed for AF power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature 5 A PC 35 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD856 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 60 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.375A B 1.2 V VBE(on) Base-Emitter On Voltage IC= 3A; VCE= 4V 1.8 V ICEO Collector Cutoff Current VCE= 30V; IB= 0 B 300 μA ICES Collector Cutoff Current VCE= 60V; VBE= 0 200 μA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 1 mA hFE-1 DC Current Gain IC= 1A; VCE= 4V 40 250 hFE-2 DC Current Gain IC= 3A; VCE= 4V 10 Switching Times ton Turn-On Time IC= 1A; IB1= -IB2= 0.1A 0.5 μs toff Turn-Off Time 3.0 μs hFE-1 Classifications R 40-90 Q 70-150 P 120-250 isc Website：www.iscsemi.cn 2