2SD859

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD859 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 250V(Min) ·High Collector Power Dissipation APPLICATIONS ·Designed for AF power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 0.75 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature 1.5 A PC 35 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD859 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 250 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A B 1.0 V VBE(on) Base-Emitter On Voltage IC= 1A; VCE= 10V 1.5 V ICEO Collector Cutoff Current VCE= 150V; IB= 0 1 mA ICES Collector Cutoff Current VCE= 350V; VBE= 0 1 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1 mA hFE-1 DC Current Gain IC= 0.3A; VCE= 10V 40 250 hFE-2 DC Current Gain IC= 1A; VCE= 10V 10 Switching Times ton Turn-On Time IC= 1A; IB1= -IB2= 0.1A 0.2 μs toff Turn-Off Time 2.0 μs hFE-1 Classifications R 40-90 Q 70-150 P 120-250 isc Website：www.iscsemi.cn 2