2SD864

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD864 DESCRIPTION ·High DC Current Gain: hFE = 1000(Min)@ IC= 1.5A ·Collector-Emitter Breakdown Voltage: V(BR)CEO = 120V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = 1.5V(Max)@ IC= 1.5A ·Complement to Type 2SB765 APPLICATIONS ·Medium speed and power switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak Collector Power Dissipation TC=25℃ Junction Temperature 6 A PC 30 W Tj 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS IC= 25mA, RBE= ∞ MIN TYP. 2SD864 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage 120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA , IC= 0 7 V VCE(sat)-1 VCE(sat)-2 VBE(sat)-1 VBE(sat)-2 ICBO Collector-Emitter Saturation Voltage IC= 1.5A, IB= -3mA 1.5 V Collector-Emitter Saturation Voltage IC= 3A, IB= -30mA B 3.0 V Base-Emitter Saturation Voltage IC= 1.5A, IB= -3mA 2.0 V Base-Emitter Saturation Voltage IC= 3A, IB= -30mA B 3.5 V μA μA Collector Cutoff Current VCB= 120V, IE= 0 VCE= 100V, RBE= ∞ 100 ICEO Collector Cutoff Current 10 hFE DC Current Gain IC= 1.5A; VCE= 3V 1000 20000 Switching times μs μs μs ton tstg tf Turn-on Time 0.5 Storage Time IC= 1.5A; IB1= -IB2= 3mA 4.5 Fall Time 1.1 isc Website：www.iscsemi.cn