2SD868

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD868 DESCRIPTION ·With TO-3 package ·Built-in damper diode ·High voltage ,high speed ·Low collector saturation voltage APPLICATIONS ·For use in color TV deflection circuits PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-base voltage Collector-collector voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 600 5 2.5 1.0 50 150 -65~150 UNIT V V V A A W ℃ ℃ PT Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rθjc CHARACTERISTICS Thermal resistance junction to case MAX 2.5 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)EBO VCEsat VBEsat ICBO hFE VF fT COB tf PARAMETER Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current DC current gain Diode forward voltage Transition frequency Collector output capacitance Fall time CONDITIONS IE=200m A;IC=0 IC=2 A;IB=0.6 A B 2SD868 MIN 5 TYP. MAX UNIT V 8.0 1.5 10 8 2.0 3 100 1.0 V V μA IC=2 A;IB=0.6 A B VCB=500V;IE=0 IC=0.5A ; VCE=5V IF=2.5A IC=0.1A ; VCE=10V; f=1MHz IE=0 ; VCB=10V;f=1MHz IC=2A;IB1end=0.6A V MHz pF μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD868 Fig.2 Outline dimensions 3