2SD869

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD869 DESCRIPTION ·With TO-3 package ·Built-in damper diode ·High voltage ,high speed ·Low collector saturation voltage APPLICATIONS ·For color TV horizontal output applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC IE PT Tj Tstg PARAMETER Collector-base voltage Collector-collector voltage Emitter-base voltage Collector current Emitter current Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 600 5 3.5 -3.5 50 150 -65~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)EBO VCEsat VBEsat ICBO hFE VF fT COB tf PARAMETER Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current DC current gain Diode forward voltage Transition frequency Collector output capacitance Fall time CONDITIONS IE=200m A;IC=0 IC=3 A;IB=0.8 A B 2SD869 MIN 5 TYP. MAX UNIT V 8.0 1.5 10 8 2.0 3 95 1.0 V V μA IC=3 A;IB=0.8 A B VCB=500V;IE=0 IC=0.5A ; VCE=5V IF=3.5A IC=0.1A ; VCE=10V IE=0 ; VCB=10V;f=1MHz IC=3A;IB1end=0.8A V MHz pF μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD869 Fig.2 Outline dimensions 3