2SD878

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD878 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 60V (Min) ·High Power Dissipation ·High Current Capability APPLICATIONS ·High power amplifier applications. ·High power switching applications. ·DC-DC converter applications. ·Regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A IB B Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature 7 A PC 115 W Tj 175 ℃ Tstg Storage Temperature Range -65~175 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD878 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 60 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A B 1.1 V VBE(on) Base-Emitter On Voltage IC= 4A; VCE= 4V 1.8 V ICBO Collector Cutoff Current VCB= 100V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 0.1 mA hFE-1 DC Current Gain IC= 4A; VCE= 4V 20 70 hFE-2 DC Current Gain IC= 10A; VCE= 4V 5 COB Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz 150 pF fT Current-Gain—Bandwidth Product IC= 1A; VCE= 4V 1.5 MHz Switching Times ton Turn-on Time 2.5 μs tstg Storage Time VCC= 50V, RL= 10Ω,IB1= -IB2= 0.5A 3.5 tf Fall Time 1.2 isc Website：www.iscsemi.cn