2SD880

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD880 DESCRIPTION ·With TO-220C package ·Complement to type 2SB834 ·Low collector saturation voltage APPLICATIONS ·Designed for use in audio frequency power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION · Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Collector dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base CONDITIONS VALUE 60 60 7 3 6 0.5 30 150 -50~150 UNIT V V V A A A W ℃ ℃ Open collector PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rθjc CHARACTERISTICS Thermal resistance junction to case MAX 4.16 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCEsat VBE ICBO IEBO hFE fT PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=50mA ;IB=0 IE=1mA ;IC=0 IC=3A; IB=0.3A IC=0.5A ; VCE=5V VCB=60V; IE=0 VEB=7V; IC=0 IC=0.5A ; VCE=5V IC=0.5A ; VCE=5V;f=1MHz 60 3 MIN 60 7 TYP. 2SD880 MAX UNIT V V 1.0 1.0 100 100 300 V V μA μA MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=10IB1=-10IB2=2A VCC=30V PW=30μs 1.2 2.0 1.1 μs μs μs hFE Classifications O 60-120 Y 100-200 GR 150-300 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD880 Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3