2SD884

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD884 DESCRIPTION ·With TO-220C package ·High voltage;high speed ·Large PC APPLICATIONS ·For horizontal deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION · ABSOLUTE MAXIMUM RATNIGS(TC=25℃) SYMBOL VCBO VCEO VEBO IC ICP ICP PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Collector current-Peak Total power dissipation Junction temperature Storage temperature nonrepetitive TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 330 200 6 7 10 15 40 150 -55~150 UNIT V V V A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCE(sat) VBE(sat) PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage CONDITIONS IC=100mA ; IB=0 IC=5A ;IB=0.5A B 2SD884 MIN 200 TYP. MAX UNIT V 1.0 1.2 0.1 V V IC=5A ;IB=0.5A B VCE=330V; VEB=0 ICES Collector cut-off current VCE=300V; VEB=0,Ta=100℃ IEBO hFE tf Emitter cut-off current DC current gain Fall time VEB=6.0V; IC=0 IC=5A ; VCE=4V IC=5A ;-VEB=5V IB1 =0.8A;RB=0.5Ω 10 mA 1.0 1.0 45 0.75 μs mA 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD884 Fig.2 Outline dimensions (unindicated tolerance: ±0.10mm) 3