2SD897

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD897 DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·High Switching Speed ·Low Collector Saturation Voltage: VCE(sat)= 5.0V(Max.)@ IC= 1A ·Built-in Damper Diode APPLICATIONS ·Designed for use in color TV deflection circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current- Continuous Collector Current- Peak Base Current- Continuous Collector Power Dissipation @ TC= 25℃ Junction Temperature Storage Temperature Range VALUE 1500 600 6 1.5 5.0 0.8 50 150 -65~150 UNIT V V V A A A W ℃ ℃ PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 2.5 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD897 MAX UNIT VEBO Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 6.0 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A B 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 0.2A B 1.5 V ICES Collector Cutoff Current VCE= 1500V; RBE= 0 500 μA hFE DC Current Gain IC= 0.5A; VCE= 5V 8 VECF C-E Diode Forward Voltage IF= 2A 2.5 V fT Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V 3 MHz tf Fall Time IC= 0.8A, IB1(end)= 0.16A 1.0 μs isc Website：www.iscsemi.cn 2