2SD905

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD905 DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·For high voltage power switching TV horizontal deflection output applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1400 650 5 8 10 50 150 -45~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD905 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;RBE=∞ 650 V V(BR)EBO Emitter-base breakdown voltage IE=10mA ; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=8A;IB=1.5A 10 V VBEsat Base-emitter saturation voltage IC=8A;IB=1.5A 1.5 V ICES Collector cut-off current VCE=1400V ; RBE=0 0.5 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.5 mA hFE DC current gain IC=1A ; VCE=5V 8 36 tf Fall time IC=6.8A; IB1=1.1A;LB=0 1.0 μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD905 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3