2SD907

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD907 DESCRIPTION ·High Collector Current ·Good Linearity of hFE ·High Reliability ·Wide Area of Safe Operation APPLICATIONS ·Audio amplifier ·Series regulators ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE 80 80 7 10 1.5 80 150 -55~150 UNIT V V V A A W ℃ ℃ PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.56 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain CONDITIONS IC= 10mA; IB= 0 IC= 0.1mA; IE= 0 IE= 0.1mA; IC= 0 IC= 5A; IB= 0.5A B 2SD907 MIN 80 80 7 TYP. MAX UNIT V V V 1.2 2.0 0.1 0.1 40 V V mA mA IC= 5A; IB= 0.5A B VCB= 80V; IE= 0 VEB= 7V; IC= 0 IC= 2A; VCE= 5V Switching times ton tstg tf Turn-on Time Storage Time Fall Time IC= 5A; IB1= -IB2= 0.5A RL= 5Ω; PW=20μs; Duty Cycle≤2% 1.0 2.0 1.0 μs μs μs isc Website：www.iscsemi.cn 2