2SD916

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD916 DESCRIPTION ·High DC Current Gain ·Low Saturation Voltage ·High Reliability APPLICATIONS ·Audio power amplifiers ·Relay& solenoid drivers ·Motor controls ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VCEO(SUS) VEBO IC IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE 60 60 50 6 7 0.2 30 150 -55~150 UNIT V V V V A A W ℃ ℃ PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 4.0 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD916 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.1mA; IB= 0 B 60 V VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0 50 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 60 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 IC= 3A; IB= 7.5mA B 6 V VCE(sat) VBE(sat) ICBO Collector-Emitter Saturation Voltage 1.5 V Base-Emitter Saturation Voltage IC= 3A; IB= 7.5mA B 2.5 V Collector Cutoff Current VCB= 60V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 50 mA hFE DC Current Gain IC= 3A; VCE= 1.5V 800 4000 isc Website：www.iscsemi.cn 2