2SD917

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD917 DESCRIPTION ·With TO-3PN package ·High speed switching ·High VCBO ·Large collector power dissipation APPLICATIONS ·For horizontal deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Collector current (Nonrepeatitive) Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 330 200 6 7 10 15 70 150 -55~150 UNIT V V V A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO VCEsat VBEsat ICES IEBO hFE-1 hFE -2 tf PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Fall time CONDITIONS IC=30mA ;IB=0 IC=1mA; IE=0 IC=5A; IB=0.5A IC=5A; IB=0.5A VCE=330V; VBE=0 Ta=100℃ VEB=6V; IC=0 IC=0.5A ; VCE=4V IC=5A ; VCE=4V IC=5A IB1=0.8A,VEB=-5V,RB=0.5Ω 120 15 MIN 200 330 TYP. 2SD917 MAX UNIT V V 1.0 1.2 1 15 1 240 V V mA mA 0.75 μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD917 Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3