2SD959

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD959 DESCRIPTION ・With TO-220 package ・Low collector saturation voltage ・Complement to type 2SB867 ・Excellent linearity of hFE APPLICATIONS ・For power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 130 80 7 3 6 30 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=10mA ;IE=0 IC=2A; IB=0.1A IC=2A; IB=0.1A VCB=100V;IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=2V IC=0.5A ; VCE=2V IC=0.5A ; VCE=10V 45 60 30 MIN 80 2SD959 TYP. MAX UNIT V 0.5 1.5 10 50 V V μA μA 260 MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=0.5A IB1=-IB2=50mA 0.5 2.5 0.15 μs μs μs hFE-2 classifications R 60-120 Q 90-180 P 130-260 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD959 Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD959 4 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD959 5