2SD961

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD961 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@IC= 4A ·Complement to Type 2SB869 APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature 10 A PC 40 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD961 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 80 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.2A B 0.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.2A B 1.5 V ICBO Collector Cutoff Current VCB= 100V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 50 μA hFE-1 DC Current Gain IC= 0.1A; VCE= 2V 45 hFE-2 DC Current Gain IC= 0.5A; VCE= 2V 60 260 fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V 30 MHz Switching Times ton Turn-On Time 0.5 μs ts Storage Time IC= 2A; IB1= -IB2= 0.2A 1.5 μs tf Fall Time 0.15 μs hFE-2 Classifications R 60-120 Q 90-180 P 130-260 isc Website：www.iscsemi.cn 2