2SD970

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD970 DESCRIPTION ・With TO-220 package ・High DC current gain ・DARLINGTON ・Complement to type 2SB791 APPLICATIONS ・For medium speed and power switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 120 120 7 8 12 40 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICBO ICEO hFE PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain CONDITIONS IC=25mA ;RBE=0 IE=50mA ; IC=0 IC=4A ;IB=8mA IC=8A ;IB=80mA IC=4A ;IB=8mA IC=8A ;IB=80mA VCB=120V; IE=0 VCE=100V; RBE=∞ IC=4A ; VCE=3V 1000 MIN 120 7 TYP. 2SD970 MAX UNIT V V 1.5 3.0 2.0 3.5 100 10 20000 V V V V μA μA Switching times ton ts tf Turn-on time Storage time Fall time IC=4A ;IB1=-IB2=8mA 0.4 5.4 1.1 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD970 Fig.2 Outline dimensions 3