2SD985

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD985 2SD986 DESCRIPTION ・With TO-126 package ・Complement to type 2SB794/795 ・DARLINGTON ・High DC current gain ・Low collector saturation voltage APPLICATIONS ・For low frequency power amplifier and power switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base ・ Absolute maximum ratings (Ta=25℃) SYMBOL VCBO PARAMETER Collector-base voltage 2SD985 VCEO Collector-emitter voltage 2SD986 VEBO IC ICM IB Emitter -base voltage Collector current Collector current-Peak Base current Ta=25℃ PT Total power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 10 150 -55~150 ℃ ℃ Open collector Open base 80 8 ±1.5 ±3.0 0.15 1.0 W V A A A CONDITIONS Open emitter VALUE 150 60 V UNIT V Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD985 2SD986 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEsat VBEsat PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage 2SD985 ICBO Collector cut-off current 2SD986 IEBO hFE-1 hFE-2 Emitter cut-off current DC current gain DC current gain VCB=80V; IE=0 VEB=5V; IC=0 IC=0.5A ; VCE=2V IC=1.0A ; VCE=2V 1000 2000 30000 2.0 mA CONDITIONS IC=1.0A; IB=1.0mA IC=1.0A; IB=1.0mA VCB=60V; IE=0 10 μA MIN TYP. MAX 1.5 2.0 UNIT V V Switching times ton ts tf Turn-on time Storage time Fall time IC=1.0A;IB1=-IB2=1.0mA VCC=50V; RL=50Ω 0.5 1.0 1.0 μs μs μs hFE-2 Classifications M 2000-5000 L 4000-10000 K 8000-30000 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD985 2SD986 Fig.2 Outline dimensions 3