2SD993

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD993 DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·Collector-Emitter Saturation Voltage: VCE(sat)= 10V(Max.)@ IC= 2.5A ·Built-in Damper Diode APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 3 A ICP Collector Current- Peak Collector Power Dissipation @ TC= 25℃ Junction Temperature 6 A PC 50 W TJ 150 ℃ Tstg Storage Temperature Range -40~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD993 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0; L= 35mH 600 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.6A 10 V VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.6A 1.3 V ICES Collector Cutoff Current VCB= 1500V; VEB= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 4V; IC= 0 44 133 mA hFE DC Current Gain IC= 2A; VCE= 5V 3 15 isc Website：www.iscsemi.cn 2