3DD201

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 3DD201 DESCRIPTION ・With TO-3 package ・High collector-base breakdown voltage : VCBO=350V APPLICATIONS ・For TV horizontal output applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 350 150 6 8 50 150 -55~150 UNIT V V V A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rθjc CHARACTERISTICS Thermal resistance junction to case MAX 1.5 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=50mA ;IB=0 IC=1mA ;IE=0 IE=1mA ;IC=0 IC=5A; IB=0.5A IC=5A; IB=0.5A VCB=350V; IE=0 VEB=6V; IC=0 IC=2A ; VCE=10V 40 MIN 150 350 6 TYP. 3DD201 MAX UNIT V V V 1.5 1.5 0.5 0.1 120 V V mA mA 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 3DD201 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3