INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
3DD301B
DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 50V(Min) ·Collector-Emitter Saturation Voltage: VCE(sat)= 2.0V(Max) @IC= 3A
APPLICATIONS ·Designed for B/W TV vertical output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
4
V
IC
Collector Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature
5
A
PC
30
W ℃
TJ
150
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 2.5 UNIT ℃/W
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
3DD301B
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 5mA; IB= 0
B
50
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
4
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC= 5mA; IE= 0
80
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 3A; IB= 0.3A
B
2.0
V
ICBO
Collector Cutoff Current
VCB= 50V; IE= 0
0.5
mA
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
0.1
mA
hFE
DC Current Gain
IC= 3A; VCE= 5V
30
250
isc Website:www.iscsemi.cn
2
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