3DD303B

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DD303B DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 60V(Min) ·Collector-Emitter Saturation Voltage: VCE(sat)= 0.6V(Max) @IC= 0.5A APPLICATIONS ·Designed for B/W TV vertical output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous Collector Power Dissipation @ TC=75℃ Junction Temperature 3 A PC 30 W ℃ TJ 150 Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 2.5 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 3DD303B TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 B 60 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 6 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 100 V VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA 0.6 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.3A B 1.5 V ICBO Collector Cutoff Current VCB= 50V; IE= 0 0.5 mA ICEO Collector Cutoff Current VCE= 50V; IB= 0 B 0.5 mA hFE DC Current Gain IC= 0.5A; VCE= 5V 50 200 isc Website：www.iscsemi.cn 2