3DD7D

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 3DD7D DESCRIPTION ·With TO-3 package ·High power dissipation APPLICATIONS ·power amplifier ·Low-speed switching ·Power regulator PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION · Absolut maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=75℃ Open emitter Open base Open collector CONDITIONS VALUE 250 200 5 7.5 75 -55~175 -55~175 UNIT V V V A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.33 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) ICEO hFE PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current DC current gain CONDITIONS IC=3mA ; IB=0 IC=3mA ; IE=0 IE=2mA ; IC=0 IC=3.75A ;IB=0.38 A VCE=30V; IB=0 IC=3.75A ; VCE=10V 15 MIN 200 250 5 TYP. 3DD7D MAX UNIT V V V 1.2 1.0 180 V mA hFE classifications 红 15-25 橙 25-40 黄 40-55 绿 55-80 蓝 80-120 紫 120-180 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 3DD7D Fig.2 Outline dimensions (unindicated tolerance: ±0.10mm) 3