4N45

isc N-Channel MOSFET Transistor 4N45 DESCRIPTION ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage: VDSS= 450V(Min) ·Fast Switching Speed APPLICATIONS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 450 V VGS Gate-Source Voltage ±30 V Drain Current-continuous@ TC=25℃ 4 A Pulse Drain Current 10 A Total Dissipation@TC=25℃ 75 W Max. Operating Junction Temperature 150 ℃ -55~150 ℃ ID ID(puls) Ptot Tj Tstg Storage Temperature Range ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.67 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor 4N45 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL V(BR)DSS PARAMETER CONDITIONS MIN Drain-Source Breakdown Voltage VGS= 0; ID= 250µA 450 Gate Threshold Voltage VDS= VGS; ID=250µA 2.0 Diode Forward On-Voltage RDS(on) TYPE MAX UNIT V 4.0 V IS=4A ;VGS= 0 1.4 V Drain-Source On-Resistance VGS= 10V; ID=2.5A 2.5 Ω IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS= 450V; VGS= 0 10 µA VGS(th) VSD NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website：www.iscsemi.com 2 isc & iscsemi is registered trademark