9N60

INCHANGE Semiconductor isc Product Specification isc N-Channel Mosfet Transistor 9N60 ·FEATURES ·Drain Current –ID= 8.5A@ TC=25℃ ·Drain Source Voltage: VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.0Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requirements ·DESCRITION ·Designed for high efficiency switch mode power supply. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VDSS VGS ID IDM PD Tj Tstg PARAMETER Drain-Source Voltage Gate-Source Voltage-Continuous Drain Current-Continuous Drain Current-Single Plused Total Dissipation @TC=25℃ Max. Operating Junction Temperature Storage Temperature VALUE 600 ±20 8.5 34 125 150 -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 1.0 62.5 UNIT ℃/W ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc N-Channel Mosfet Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 9N60 MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 600 V VGS(th) RDS(on) IGSS Gate Threshold Voltage VDS= VGS; ID= 0.25mA 2 4 V Ω Drain-Source On-Resistance VGS= 10V; ID= 5A VGS= ±20V; VDS= 0 1.0 ±100 Gate-Body Leakage Current nA μA IDSS Zero Gate Voltage Drain Current VDS= 600V; VGS= 0 1 VSD Forward On-Voltage IS= 8.5A; VGS= 0 1.7 V · isc Website：www.iscsemi.cn