BD131

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD131 DESCRIPTION ·Complement to type BD132 ·With TO-126 package ·High current (Max: 3A) ·Low voltage (Max: 45V) APPLICATIONS ·For general purpose power applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base · Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IBM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter -base voltage Collector current (DC) Collector current-Peak Base current-Peak Total power dissipation Junction temperature Storage temperature Tmb≤60℃ Open emitter Open base Open collector CONDITIONS VALUE 70 45 6 3 6 0.5 15 150 -65~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-mb PARAMETER Thermal resistance from junction to ambient Thermal resistance from junction to mounting base VALUE 100 6 UNIT K/W K/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 PARAMETER Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage CONDITIONS IC=0.5A; IB=50mA IC=2A; IB=0.2A IC=0.5A; IB=50mA IC=2A; IB=0.2A VCB=50V; IE=0 ICBO Collector cut-off current VCB=50V; IE=0 Tj=150℃ IEBO hFE-1 hFE-2 fT Emitter cut-off current DC current gain DC current gain Transition frequency VEB=5V; IC=0 IC=0.5A ; VCE=12V IC=2A ; VCE=1V IC=0.25A; VCE=5V ;f=100MHz 40 20 60 MIN TYP. BD131 MAX 0.3 0.7 1.2 1.5 50 10 50 UNIT V V V V nA μA nA MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BD131 Fig.2 Outline dimensions 3