BD132

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD132 DESCRIPTION ・Complement to type BD131 ・With TO-126 package ・High current (Max:- 3A) ・Low voltage (Max: -45V) APPLICATIONS ・For general purpose power applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base ・ Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IBM Pt Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter -base voltage Collector current (DC) Collector current-Peak Base current-Peak Total power dissipation Junction temperature Storage temperature Tmb≤60℃ Open emitter Open base Open collector CONDITIONS VALUE -45 -45 -4 -3 -6 -0.5 15 150 -65~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-mb PARAMETER Thermal resistance from junction to ambient Thermal resistance from junction to mounting base VALUE 100 6 UNIT K/W K/W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BD132 MAX UNIT VCEsat-1 Collector-emitter saturation voltage IC=-0.5A; IB=-50mA -0.3 V VCEsat-2 VBEsat-1 Collector-emitter saturation voltage IC=-2A; IB=-0.2A IC=-0.5A; IB=-50mA -0.7 V Base-emitter saturation voltage -1.2 V VBEsat-2 Base-emitter saturation voltage IC=-2A; IB=-0.2A -1.5 V VCB=-50V; IE=0 ICBO Collector cut-off current VCB=-50V; IE=0 Tj=150℃ -50 nA μA -10 IEBO Emitter cut-off current VEB=-5V; IC=0 -50 nA hFE-1 hFE-2 DC current gain IC=-0.5A ; VCE=-12V IC=-2A ; VCE=-1V 40 DC current gain 20 fT Transition frequency IC=-0.25A; VCE=-5V ;f=100MHz 60 MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE BD132 Fig.2 Outline dimensions 3