BD136

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ・With TO-126 package ・High current ・Complement to type BD135/137/139 APPLICATIONS ・Driver stages in high-fidelity amplifiers and television circuits PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base BD136 BD138 BD140 ・ Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER BD136 VCBO Collector-base voltage BD138 BD140 BD136 VCEO Collector-emitter voltage BD138 BD140 VEBO IC ICM IBM Pt Tj Tstg Tamb Emitter -base voltage Collector current (DC) Collector current-Peak Base current-Peak Total power dissipation Junction temperature Storage temperature Operating ambient temperature Tmb≤70℃ Open collector Open base Open emitter CONDITIONS VALUE -45 -60 -100 -45 -60 -100 -5 -1.5 -2 -1 8 150 -65~150 -65~150 V A A A W ℃ ℃ ℃ V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-mb PARAMETER Thermal resistance from junction to ambient Thermal resistance from junction to mounting base VALUE 100 10 UNIT K/W K/W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD136 BD138 BD140 MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=-0.5A; IB=-50mA -0.5 V VBE Base-emitter voltage IC=-500mA ; VCE=-2V VCB=-30V; IE=0 -1.0 V -100 nA μA ICBO Collector cut-off current VCB=-30V; IE=0 Tj=125℃ -10 IEBO Emitter cut-off current VEB=-5V; IC=0 -100 nA hFE-1 DC current gain DC current gain BD136-10;BD138-10;BD140-10 BD136-16;BD138-16;BD140-16 DC current gain IC=-5mA ; VCE=-2V 40 63 63 100 25 250 160 250 hFE-2 IC=-150mA ; VCE=-2V hFE-3 fT IC=-500mA ; VCE=-2V IC=-50mA; VCE=-5V ;f=100MHz Transition frequency 160 MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE BD136 BD138 BD140 Fig.2 Outline dimensions 3