BD137

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-126 package ・High current ・Complement to type BD136/138/140 APPLICATIONS ・Driver stages in high-fidelity amplifiers and television circuits PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION BD135 BD137 BD139 ・ Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER BD135 VCBO Collector-base voltage BD137 BD139 BD135 VCEO Collector-emitter voltage BD137 BD139 VEBO IC ICM IBM Pt Tj Tstg Tamb Emitter -base voltage Collector current (DC) Collector current-Peak Base current-Peak Total power dissipation Junction temperature Storage temperature Operating ambient temperature Tmb≤70℃ Open collector Open base Open emitter CONDITIONS VALUE 45 60 100 45 60 100 5 1.5 2 1 8 150 -65~150 -65~150 V A A A W ℃ ℃ ℃ V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-mb PARAMETER Thermal resistance from junction to ambient Thermal resistance from junction to mounting base VALUE 100 10 UNIT K/W K/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD135 BD137 BD139 MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=0.5A; IB=50mA 0.5 V VBE Base-emitter voltage IC=500mA ; VCE=2V VCB=30V; IE=0 1.0 V 100 nA μA ICBO Collector cut-off current VCB=30V; IE=0 Tj=125℃ 10 IEBO Emitter cut-off current VEB=5V; IC=0 100 nA hFE-1 DC current gain DC current gain BD135-10;BD137-10;BD139-10 BD135-16;BD137-16;BD139-16 DC current gain IC=5mA ; VCE=2V 40 63 63 100 25 250 160 250 hFE-2 IC=150mA ; VCE=2V hFE-3 fT IC=500mA ; VCE=2V IC=50mA; VCE=5V ;f=100MHz Transition frequency 190 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BD135 BD137 BD139 Fig.2 Outline dimensions 3