BD157

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD157 DESCRIPTION ·Collector–Emitter Sustaining Voltage: VCEO(SUS) = 250V(Min) ·DC Current Gain: hFE = 30~240(Min) @ IC= 50mA APPLICATIONS ·Designed for power output stages for television, radio, phonograph and other consumer product applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak ww w scs .i 275 250 5 0.5 1.0 0.25 20 150 -65~150 VALUE UNIT V .cn mi e V V A A A W ℃ ℃ Base Current-Continuous Collector Power Dissipation TC=25℃ Junction Temperature Storage Temperature Range PC Ti Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 6.25 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BD157 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1.0mA; IB= 0 B 250 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 275 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 50mA ;IB= 5mA B 1.0 V ICBO Collector Cutoff Current VCB= 275V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain w w scs .i w IC= 50m A; VCE= 10V .cn mi e 0.1 mA 30 240 isc Website：www.iscsemi.cn