BD175

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD175 BD177 BD179 DESCRIPTION ・With TO-126 package ・Complement to type BD176/178 /180 APPLICATIONS ・For medium power linear and switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base ・ Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER BD175 VCBO Collector-base voltage BD177 BD179 BD175 VCEO Collector-emitter voltage BD177 BD179 VEBO IC ICM PC Tj Tstg Emitter -base voltage Collector current (DC) Collector current-Peak Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE 45 60 80 45 60 80 5 3 7 30 150 -65~150 V A A W ℃ ℃ V V UNIT Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEsat VBE PARAMETER Collector-emitter saturation voltage Base-emitter on voltage BD175 VCEO(SUS) Collector-emitter sustaining voltage BD177 BD179 BD175 ICBO Collector cut-off current BD177 BD179 IEBO hFE-1 hFE-2 fT Emitter cut-off current DC current gain DC current gain Transition frequency VCB=45V; IE=0 VCB=60V; IE=0 VCB=80V; IE=0 VEB=5V; IC=0 IC=150mA ; VCE=2V IC=1A ; VCE=2V IC=250mA; VCE=10V IC=0.1A; IB=0 CONDITIONS IC=1A; IB=0.1A IC=1A ; VCE=2V BD175 BD177 BD179 MIN TYP. MAX 0.8 1.3 UNIT V V 45 60 80 V 100 μA 1 40 15 3 250 mA MHz hFE-1 Classifications 6 40-100 10 63-160 16 100-250 ※ classification 16 :only BD175 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BD175 BD177 BD179 Fig.2 Outline dimensions 3