BD178

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD176 BD178 BD180 DESCRIPTION With TO-126 package ・Complement to type BD175 /177 /179 APPLICATIONS ・For medium power linear and switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base ・ Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER BD176 VCBO Collector-base voltage BD178 BD180 BD176 VCEO Collector-emitter voltage BD178 BD180 VEBO IC ICM PC Tj Tstg Emitter -base voltage Collector current (DC) Collector current-Peak Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE -45 -60 -80 -45 -60 -80 -5 -3 -7 30 150 -65~150 V A A W ℃ ℃ V V UNIT Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEsat VBE PARAMETER Collector-emitter saturation voltage Base-emitter on voltage BD176 VCEO(SUS) Collector-emitter sustaining voltage BD178 BD180 BD176 ICBO Collector cut-off current BD178 BD180 IEBO hFE-1 hFE-2 fT Emitter cut-off current DC current gain DC current gain Transition frequency VCB=-45V; IE=0 VCB=-60V; IE=0 VCB=-80V; IE=0 VEB=-5V; IC=0 IC=-150mA ; VCE=-2V IC=-1A ; VCE=-2V IC=-250mA; VCE=-10V IC=-0.1A; IB=0 CONDITIONS IC=-1A; IB=-0.1A IC=-1A ; VCE=-2V BD176 BD178 BD180 MIN TYP. MAX -0.8 -1.3 UNIT V V -45 -60 -80 V -100 μA -1 40 15 3 250 mA MHz hFE-1 Classifications 6 40-100 10 63-160 16 100-250 ※ classification 16 :only BD176 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE BD176 BD178 BD180 Fig.2 Outline dimensions 3