BD190

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ・With TO-126 package ・High current ・Complement to type BD189 APPLICATIONS ・For use in 5 to 10 watt audio amplifiers utilizing complementary or quasi complementary circuits. PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base BD190 ・ Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB Pt Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter -base voltage Collector current (DC) Base current Total power dissipation Junction temperature Storage temperature Tmb≤70℃ Open emitter Open base Open collector CONDITIONS VALUE -70 -60 -5 -4 -2 40 -65~150 -65~150 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER Thermal resistance, junction to case VALUE 3.12 UNIT ℃/W Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD190 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(SUS)CEO Collector-emitter sustaining voltage IC=-0.1A; IB=0 -60 V VCEsat Collector-emitter saturation voltage IC=-2.0A; IB=-0.2A -1.0 V VBE Base-emitter on voltage IC=-2A ; VCE=-2V -1.5 V ICBO Collector cut-off current VCB=-70V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -1.0 mA hFE-1 DC current gain IC=-0.5A ; VCE=-2V 40 hFE-2 DC current gain IC=-2A ; VCE=-2V 15 fT Transition frequency IC=-1.0A; VCE=-10V ;f=1.0MHz 2.0 MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE BD190 Fig.2 Outline dimensions 3