BD203F

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD201F/203F DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO = 45V(Min)- BD201F 60V(Min)- BD203F ·Complement to Type BD202F/204F APPLICATIONS ·Designed for use in hi-fi equipment delivering an output of 15 to 15 W into a 4Ωor 8Ωload. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BD201F VCBO Collector-Base Voltage BD203F BD201F VCEO Collector-Emitter Voltage BD203F VEBO IC ICM IB B VALUE 60 UNIT V 60 45 V 60 5 8 12 3 32 150 -65~150 V A A A W ℃ ℃ Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 6.3 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BD201F IC= 0.2A ;IB= 0 B BD201F/203F CONDITIONS MIN 45 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage V 60 BD203F V(BR)CBO V(BR)EBO VCE(sat)-1 VCE(sat)-2 VBE(sat) VBE(on) ICEO ICBO IEBO Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current BD201F hFE-1 DC Current Gain BD203F hFE-2 fT DC Current Gain Current-Gain—Bandwidth Product IC= 2A ; VCE= 2V IC= 1A ; VCE= 2V IC= 0.3A ; VCE= 3V, ftest= 1.0MHz IC= 1mA ;IE= 0 IE= 1mA ;IC= 0 IC= 3A; IB= 0.3A B 60 5 1.0 1.5 2.0 1.5 0.2 0.1 1.0 0.5 V V V V V V mA mA mA IC= 6A; IB= 0.6A B IC= 6A; IB= 0.6A B IC= 3A ; VCE= 2V VCE= 30V; IB= 0 B VCB= VCBO;IE= 0 1 VCB= /2VCBO;IE= 0; TJ= 150℃ VEB= 5V; IC=0 IC= 3A ; VCE= 2V 30 30 7.0 MHz Switching Times ton toff Turn-On Time IC= 2A; IB1= -IB2= 0.2A Turn-Off Time 4 μs 1 μs isc Website：www.iscsemi.cn 2