BD229

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD227/229/231 DESCRIPTION ·DC Current Gain: hFE= 40(Min)@ IC= -0.15A ·Complement to Type BD226/228/230 APPLICATIONS ·Designed for use in driver stages in television circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BD227 VCBO Collector-Base Voltage BD229 BD231 BD227 VCEO Collector-Emitter Voltage BD229 BD231 BD227 VCER Collector-Emitter Voltage(RBE= 1kΩ) BD229 BD231 VEBO IC ICM PC TJ Tstg Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @ TC≤62℃ Junction Temperature Storage Temperature Range VALUE -45 -60 -100 -45 -60 -80 -45 -60 -100 -5 -1.5 -3.0 12.5 150 -65~150 V A A W ℃ ℃ V V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MAX 7 100 UNIT ℃/W ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD227/229/231 MIN TYP. MAX UNIT BD227 Collector-Emitter Sustaining Voltage -45 VCEO(SUS) BD229 IC= -100mA ; IB= 0 -60 V BD231 -80 VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A B -0.8 V VBE(on) ICBO Base-Emitter On Voltage IC= -1A; VCE= -2V VCB= -30V; IE= 0 VCB= -30V; IE= 0,TC= 125℃ VEB= -5V; IC=0 -1.3 -0.1 -10 -10 V μA μA Collector Cutoff Current IEBO Emitter Cutoff Current hFE-1 DC Current Gain IC= -5mA ; VCE= -2V 25 hFE-2 DC Current Gain IC= -1A ; VCE= -2V 25 hFE-3 DC Current Gain IC= -0.15A ; VCE= -2V 40 250 fT Current-Gain—Bandwidth Product IC= -50mA ; VCE= -5V 50 MHz isc Website：www.iscsemi.cn 2