BD230

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD230 DESCRIPTION ・With TO-126 package ・Complement to type BD231 ・High current (Max:1.5A) ・Low voltage (Max: 80V) APPLICATIONS ・Drive stage in TV circuits PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base ・ Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IBM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current-Peak Tmb≤62℃ PD Total power dissipation TC=25℃ Tj Tstg Tamb Junction temperature Storage temperature Operating ambient temperature 10 150 -65~150 -65~150 ℃ ℃ ℃ Open emitter Open base Open collector CONDITIONS VALUE 100 80 5 1.5 3 1 12.5 W UNIT V V V A A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEsat VBEsat VBE ICBO IEBO hFE-1 hFE-2 hFE-3 fT PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency CONDITIONS IC=1A; IB=0.1A IC=1A; IB=0.1A IC=1A ; VCE=2V VCB=30V; IE=0 VEB=5V; IC=0 IC=5mA ; VCE=2V IC=150mA ; VCE=2V IC=1A ; VCE=2V IC=50mA ; VCE=5V 40 40 25 125 MIN TYP. BD230 MAX 0.8 1.2 1.3 0.1 0.1 UNIT V V V μA μA 250 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BD230 Fig.2 Outline dimensions 3