BD233

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-126 package ・Complement to type BD234 /236 /238 APPLICATIONS ・For medium power linear and switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base BD233 BD235 BD237 ・ Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER BD233 VCBO Collector-base voltage BD235 BD237 BD233 VCEO Collector-emitter voltage BD235 BD237 VEBO IC ICM PC Tj Tstg Emitter -base voltage Collector current (DC) Collector current-Peak Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE 45 60 100 45 60 80 5 2 6 25 150 -65~150 V A A W ℃ ℃ V V UNIT Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEsat VBE PARAMETER Collector-emitter saturation voltage Base-emitter on voltage BD233 VCEO(SUS) Collector-emitter sustaining voltage BD235 BD237 BD233 ICBO Collector cut-off current BD235 BD237 IEBO hFE-1 hFE-2 fT Emitter cut-off current DC current gain DC current gain Transition frequency VCB=45V; IE=0 VCB=60V; IE=0 VCB=100V; IE=0 VEB=5V; IC=0 IC=150mA ; VCE=2V IC=1A ; VCE=2V IC=250mA; VCE=10V IC=0.1A; IB=0 CONDITIONS IC=1A; IB=0.1A IC=1A ; VCE=2V BD233 BD235 BD237 MIN TYP. MAX 0.6 1.3 UNIT V V 45 60 80 V 100 μA 1 40 25 3 mA MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BD233 BD235 BD237 Fig.2 Outline dimensions 3