BD236

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ・With TO-126 package ・Complement to type BD233/235 /237 APPLICATIONS ・For medium power linear and switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base BD234 BD236 BD238 ・ Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER BD234 VCBO Collector-base voltage BD236 BD238 BD234 VCEO Collector-emitter voltage BD236 BD238 VEBO IC ICM PC Tj Tstg Emitter -base voltage Collector current (DC) Collector current-Peak Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE -45 -60 -100 -45 -60 -80 -5 -2 -6 25 150 -65~150 V A A W ℃ ℃ V V UNIT Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD234 BD236 BD238 MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=-1A; IB=-0.1A -0.6 V VBE Base-emitter on voltage IC=-1A ; VCE=-2V -1.3 V BD234 Collector-emitter sustaining voltage -45 VCEO(SUS) BD236 IC=-0.1A; IB=0 -60 V BD238 -80 BD234 VCB=-45V; IE=0 μA ICBO Collector cut-off current BD236 VCB=-60V; IE=0 -100 BD238 VCB=-100V; IE=0 IEBO Emitter cut-off current VEB=-5V; IC=0 -1 mA hFE-1 DC current gain IC=-150mA ; VCE=-2V 40 hFE-2 DC current gain IC=-1A ; VCE=-2V 25 fT Transition frequency IC=-250mA; VCE=-10V 3 MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE BD234 BD236 BD238 Fig.2 Outline dimensions 3