BD239B

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD239/A/B/C DESCRIPTION ・With TO-220C package ・Complement to type BD240/A/B/C APPLICATIONS ・For medium power linear and switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION ・ Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER BD239 BD239A VCBO Collector-base voltage BD239B BD239C BD239 BD239A VCEO Collector-emitter voltage BD239B BD239C VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base 80 100 5 2 4 0.6 30 150 -65~150 V A A A W ℃ ℃ Open emitter 90 115 45 60 V CONDITIONS VALUE 55 70 V UNIT Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD239/A/B/C CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER BD239 BD239A VCEO(SUS) Collector-emitter sustaining voltage BD239B BD239C VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage BD239/A ICEO Collector cut-off current BD239B/C BD239 BD239A ICES Collector cut-off current BD239B BD239C IEBO hFE-1 hFE-2 Emitter cut-off current DC current gain DC current gain VCE=80V; VBE=0 VCE=100V; VBE=0 VEB=5V; IC=0 IC=0.2A ; VCE=4V IC=1A ; VCE=4V 40 15 1 mA VCE=60V; IB=0 VCE=45V; VBE=0 VCE=60V; VBE=0 0.2 mA IC=1 A;IB=0.2 A IC=1A ; VCE=4V VCE=30V; IB=0 0.3 mA IC=30mA; IB=0 80 100 0.7 1.3 V V CONDITIONS MIN 45 60 V TYP. MAX UNIT 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BD239/A/B/C Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3