BD244

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD244/A/B/C DESCRIPTION ·With TO-220C package ·Complement to type BD243/A/B/C APPLICATIONS ·For medium power linear and switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base · Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER BD244 BD244A VCBO Collector-base voltage BD244B BD244C BD244 BD244A VCEO Collector-emitter voltage BD244B BD244C VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base -80 -100 -5 -6 -10 -2 65 150 -65~150 V A A A W ℃ ℃ Open emitter -80 -100 -45 -60 V CONDITIONS VALUE -45 -60 V UNIT Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD244/A/B/C CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER BD244 BD244A VCEO(SUS) Collector-emitter sustaining voltage BD244B BD244C VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage BD244/A ICEO Collector cut-off current BD244B/C BD244 BD244A ICES Collector cut-off current BD244B BD244C IEBO hFE-1 hFE-2 Emitter cut-off current DC current gain DC current gain VCE=-80V; VBE=0 VCE=-100V; VBE=0 VEB=-5V; IC=0 IC=-0.3A ; VCE=-4V IC=-3A ; VCE=-4V 30 15 1 mA VCE=-60V; IB=0 VCE=-45V; VBE=0 VCE=-60V; VBE=0 -0.4 mA IC=-6A;IB=-1 A IC=-6A ; VCE=-4V VCE=-30V; IB=0 -0.7 mA IC=-30mA; IB=0 -80 -100 -1.5 -2.0 V V CONDITIONS MIN -45 -60 V TYP. MAX UNIT 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE BD244/A/B/C Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3