BD245A

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor DESCRIPTION ·Collector Current -IC= 10A ·Collector-Emitter Breakdown Voltage: V(BR)CEO = 45V(Min)- BD245; 60V(Min)- BD245A 80V(Min)- BD245B; 100V(Min)- BD245C ·Complement to Type BD246/A/B/C APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BD245 Collector-Emitter Voltage (RBE= 100Ω) BD245A BD245B BD245C BD245 Collector-Emitter Voltage BD245A BD245B BD245C VEBO IC ICM IB B BD245/A/B/C VALUE 55 70 UNIT VCER V 90 115 45 60 V 80 100 5 10 15 3 3 W 80 150 -65~150 ℃ ℃ V A A A VCEO Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation @ Ta=25℃ Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.56 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BD245 BD245A IC= 30mA ;IB=0 B BD245/A/B/C CONDITIONS MIN 45 60 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage V 80 100 BD245B BD245C VCE(sat)-1 VCE(sat)-2 VBE(on)-1 VBE(on)-2 Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Base-Emitter On Voltage BD245 BD245A BD245B BD245C BD245/A BD245B/C IC= 3A; IB= 0.3A B 1.0 4.0 1.6 3.0 V V V V IC= 10A; IB= 2.5A IC= 3A ; VCE= 4V IC= 10A ; VCE= 4V VCE= 55V; VBE= 0 VCE= 70V; VBE= 0 ICES Collector Cutoff Current 0.4 VCE= 90V; VBE= 0 VCE= 115V; VBE= 0 VCE= 30V;IB= 0 0.7 VCE= 60V;IB= 0 VEB= 5V; IC=0 IC= 1A ; VCE= 4V IC= 3A ; VCE= 4V IC= 10A ; VCE= 4V IC= 0.5A ;VCE= 10V,ftest= 1.0MHz 40 20 4 3.0 1.0 mA ICEO Collector Cutoff Current mA IEBO hFE-1 hFE-2 hFE-3 fT Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain Current-Gain—Bandwidth Product mA MHz Switching times ton toff Turn-on Time Turn-off Time 0.2 0.8 μs μs IC= 1A; IB1= -IB2= 0.1A; RL=20Ω; VBE(OFF)= -3.7V isc Website：www.iscsemi.cn 2 INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD245/A/B/C isc Website：www.iscsemi.cn