BD246

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor DESCRIPTION ·Collector Current -IC= -10A ·Collector-Emitter Breakdown Voltage: V(BR)CEO = -45V(Min)- BD246; -60V(Min)- BD246A -80V(Min)- BD246B; -100V(Min)- BD246C ·Complement to Type BD245/A/B/C APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BD246 Collector-Emitter Voltage (RBE= 100Ω) BD246A BD246B BD246C BD246 Collector-Emitter Voltage BD246A BD246B BD246C VEBO IC ICM IB B BD246/A/B/C VALUE -55 -70 UNIT VCER V -90 -115 -45 -60 V -80 -100 -5 -10 -15 -3 3 W 80 150 -65~150 ℃ ℃ V A A A VCEO Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation @ Ta=25℃ Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.56 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BD246 BD246A IC= -30mA ;IB=0 B BD246/A/B/C CONDITIONS MIN -45 -60 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage V -80 -100 BD246B BD246C VCE(sat)-1 VCE(sat)-2 VBE(on)-1 VBE(on)-2 Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Base-Emitter On Voltage BD246 BD246A BD246B BD246C BD246/A BD246B/C IC= -3A; IB= -0.3A B -1.0 -4.0 -1.6 -3.0 V V V V IC= -10A; IB= -2.5A IC= -3A ; VCE= -4V IC= -10A ; VCE= -4V VCE= -55V; VBE= 0 VCE= -70V; VBE= 0 ICES Collector Cutoff Current -0.4 VCE= -90V; VBE= 0 VCE= -115V; VBE= 0 VCE= -30V;IB= 0 -0.7 VCE= -60V;IB= 0 VEB= -5V; IC= 0 IC= -1A ; VCE= -4V IC= -3A ; VCE= -4V IC= -10A ; VCE= -4V IC= -0.5A;VCE= -10V,ftest= 1.0MHz 40 20 4 3.0 -1.0 mA ICEO Collector Cutoff Current mA IEBO hFE-1 hFE-2 hFE-3 fT Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain Current-Gain—Bandwidth Product mA MHz Switching times ton toff Turn-on Time Turn-off Time 0.2 0.8 μs μs IC= -1A; IB1= -IB2= -0.1A; RL=20Ω; VBE(OFF)= 3.7V isc Website：www.iscsemi.cn 2 INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD246/A/B/C isc Website：www.iscsemi.cn