BD249

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type BD250/A/B/C ・125 W at 25°C case temperature ・25 A continuous collector current BD249/A/B/C PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER BD249 BD249A VCEO Collector-emitter voltage BD249B BD249C BD249 BD249A VCBO Collector-base voltage BD249B BD249C VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base 90 115 5 25 40 5 125 -65~150 -65~150 V A A A W ℃ ℃ Open base 80 100 55 70 V CONDITIONS VALUE 45 60 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.0 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD249/A/B/C CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER BD249 BD249A IC=30mA ;IB=0 BD249B BD249C VCEsat-1 VCEsat-2 VBE-1 VBE-2 Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Base-emitter on voltage BD249/249A BD249B/249C IC=15A ;IB=1.5A IC=25A ;IB=5A IC=15A ; VCE=4V IC=25A ; VCE=4V VCE=30V; IB=0 1 VCE=60V; IB=0 VEB=5V; IC=0 IC=1.5A ; VCE=4V IC=15A ; VCE=4V IC=25A ; VCE=4V 25 10 5 1 mA mA 80 100 1.8 4 2 4 V V V V CONDITIONS MIN 45 60 V TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage ICEO Collector cut-off current IEBO hFE-1 hFE-2 hFE-3 Emitter cut-off current DC current gain DC current gain DC current gain Switching times ton toff Turn-on time Turn-off time IC=1A; IB1=-IB2=0.5A RL=5Ω 0.3 0.9 μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BD249/A/B/C Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3